Process of fabrication of a ferroelectric semiconductor memory

摘要

A switching transistor (2) is formed on a semiconductor substrate (1). An insulating layer (4) is applied, with a first layer (5) preventing hydrogen ingress. A memory condenser coupled with the transistor is added. It includes a lower (7) and upper electrode (9), with intervening metal oxide-containing layer (8). In a vertical etching stage, the insulation layer outside the storage condenser is removed to a set depth, laying bare the first barrier layer. On the storage condenser, insulating layer and first barrier layer, a second barrier layer (10) is applied, especially blocking hydrogen ingress. Preferred etching methods and materials employed are claimed.