| 摘要 |
PURPOSE: A method for forming a bond pad of a semiconductor device is provided to enlarging a bonding area between the bond pad and a metal wire or a pattern film and thereby to prevent a poor bonding. CONSTITUTION: In the method, pluralities of field oxide layers(10) are formed on a substrate, and a polysilicon layer(11) is formed on each field oxide layer(10). Then, an insulating layer(12) is formed with a uniform thickness over the entire substrate. Thus, the insulating layer(12) has an irregular surface due to a dented portion(12a) between the adjacent polysilicon layers(11). Next, the first metal layer(13) for the bond pad is deposited over the insulating layer(12) while having naturally an irregular surface including a dented portion(13a). Therefore, the irregular surface of the first metal layer(13) results in an increase of the surface area of the bond pad, thereby causing an enlargement of the bonding area between the bond pad and the metal wire or the pattern film. Thereafter, the second metal layer(14) is deposited along an outer area of the first metal layer(13), and then a passivation layer(15) is formed thereon.
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