| 摘要 |
PURPOSE: A method for manufacturing EEPROM cells is provided to stabilize a channel characteristic of the EEPROM cell by self-aligning a high concentration impurity region using a conductive sidewall. CONSTITUTION: A method for manufacturing EEPROM cells intervenes a gate oxide film(202) on a semiconductor substrate(200) to form a floating gate(204). An insulating sidewall(208) is formed at both sides of the floating gate(204). A conductive sidewall(210) is formed at the insulating sidewall(208) at one side of the floating gate(204). An impurity is doped using the floating gate(204) in which the conductive sidewall(210) is formed in the semiconductor substrate(200) as a mask. A control gate(240) is connected to the floating gate in the semiconductor substrate into which impurity is doped.
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