| 摘要 |
PURPOSE: A method for forming a wire connection is provided to be suitable for a high aspect ratio by making impurity diffusion regions formed in different layers and contact pads of wires in a ring shape to overlap a base layer plug and a plug for connecting upper wires. CONSTITUTION: A method for forming a wire connection forms the first interlayer dielectric layer(36) on a semiconductor substrate. The second interlayer dielectric layer(38) is formed of a material having a smaller etch rate than the first interlayer dielectric layer. An etch mask through which a given portion of the second interlayer dielectric layer is exposed. The second interlayer dielectric layer and a given portion of the first interlayer dielectric layer are anisotropically removed using the etch mask to form the first opening. The first interlayer dielectric layer exposed by the first opening is anisotropically removed using the etch mask to form the second opening through the surface of the semiconductor substrate is exposed. A sidewall is formed of a conductive material on the side of the first opening and first contact plug filling the second opening is then formed. The third interlayer dielectric layer(42) is formed on the second interlayer dielectric layer including the first opening and the first contact plug(402). A given portion of the third interlayer dielectric layer is removed to form the third opening through which the surface of the first contact plug is exposed. The third opening is filled with a conductive material and the second contact plug contacting the first contact plug is then formed.
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