| 摘要 |
PURPOSE: An SRAM is provided to reduce the layout size by removing global word lines and local strapping word lines and to reduce current dissipation by preventing current from flowing to blocks which are not selected. CONSTITUTION: The device includes a plurality of memory cells(20), a word line driver(10_0,...,10_n) and an equalizer(130). The memory cells includes plurality of flip-flops. The word line driver receives a block row decoder signal for selecting memory cells and a local row decoder signal and drives required word lines by controlling the local row decoder signal under the control of the global row decoder signal. The equalizer pre-charges and equalizes the bit line pairs which are coupled with the memory cells during stand by mode and separates the bit lines under the control of the block control signal from other bit lines in order to prevent current path from being formed to a block which is not selected by the word line driver.
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