| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a fabrication method thereof are provided to improve an etched pattern profile of an electrode formed of precious metal, to prevent lowering of an etch rate due to a repeated etching process, and to realize a uniform etch through an entire surface of a wafer. CONSTITUTION: The capacitor includes a conductive oxide layer(58c) formed on a lateral side of an upper electrode(58a), and a barrier layer(56a) formed between the upper electrode(58a) and a dielectric layer(54) having a high dielectric constant. The upper electrode(58a) is made of precious metal such as platinum, iridium, ruthenium, or rhodium, and the conductive oxide layer(58c) is made of oxide of precious metal constituting the upper electrode(58a). In the method, a precious metal layer for the upper electrode(58a) is formed on the barrier layer(56a) and then selectively masked. An exposed portion of the precious metal layer is implanted with oxygen ion and treated with heat, thereby forming the conductive oxide layer(58c) having a higher etch rate.
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