| 摘要 |
PURPOSE: A method for forming isolating layer of semiconductor device is provided to produce a substrate prevented from an ion collision, to prevent from increasing in a shear stress of a sidewall due to the coefficient of expansion, and to improve the characteristics of a junction leakage current which could be generated in an HDP(High Density Plasma) process by preventing a direct energy transfer on a silicon to a first HDP oxide layer formed in a filling process and absorbing the coefficient of expansion difference between a second HDP oxide layer and the silicon using the first HDP oxide layer. CONSTITUTION: A process forms a buffer layer(33) on a substrate(31), etches the substrate(31) with a predetermined depth, and forms a trench(32). The process forms a heat oxide layer(34) on a wall or a bottom of trench(32). The process performs a first filling material layer at a predetermined thickness so as not to fill perfectly the trench(32). The process forms a second filling material layer different to the first filling material layer so as to perfectly fill the trench(32) by utilizing the first filling material layer as a buffer. The process forms a device isolating layer by smoothing the first and second filling material layers after a thermal process in order to increase the density of the filling layers. The process eliminates a residue from the buffer layer and the smoothing process.
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