| 摘要 |
PURPOSE: A phase shifting mask is provided to prevent an electron from being charged in a pattern without using an over-coating. CONSTITUTION: The phase shifting mask includes a chip pattern area(1) on which a pattern of a semiconductor chip is formed and a guide line(2,3). The guide line, separated from the chip pattern area with the predetermined distance, discharges an electric charge charged to a pattern formed on the chip pattern. Also, the guide line is plurally located so as to each other separate with the predetermined distance and simultaneously has a separation area at the corner portion of each of the guide line. By the separation area, an electron charged at an isolated pattern is discharged without using an over-coating, thereby reducing cost and improving the reliability of the mask by simplifying a process.
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