| 摘要 |
PURPOSE: A control circuit for a first-in first-out memory is provided to compares a read address synchronized with a write clock signal with a write address and compares the write address synchronized with the read clock signal with the read address to control the operation of the memory accurately. CONSTITUTION: The control circuit for the first-in first-out memory a synchronizer, a write address generator(20) and a read address generator(40). The control circuit uses the write clock signal and the read clock signal which are independent from each other for controlling the operation of the memory device. The synchronizer synchronizes the read address with the write clock signal and the write address with the read clock signal. The write address generator compares the read address synchronized with the write clock signal with the write address, counts the write clock signal based on the result to generate a write address for the FIFO memory. The read address generator compares the write address synchronized with the read clock signal with the read address, counts the read clock signal based on the result to generate a read address for the FIFO memory.
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