| 摘要 |
PURPOSE: A method for sealing package of micro sensor is provided to be capable of sealing package of a micro sensor easily and simply by preparing a groove gathering an Au-Si array on a bonding edge unit of a wafer device for sealing a micro sensor and a wafer cap and increasing still more sealed degree of the micro sensor by the Au-Si array gathered on the groove. CONSTITUTION: A bonding unit formation process forms an inner fixed point(150) and an outer fixed point(160) on a sensor edge of a silicon wafer device(140) equipped with a micro sensor(130) to the upper side, by interposing a dielectric frame(120) on the upper side of a silicon(110) of a predetermined thickness, to form a low melting point sealing bonding unit(170) therebetween. A groove unit formation process forms a groove unit(300) by eliminating the lower side of the low melting point sealing bonding unit using an etching process. A dielectric frame eliminating process eliminates the dielectric frame(120) by using the etching process, except for the outer and inner fixed point(160,150) of the wafer device(140) and the low melting point sealing bonding unit. A conductive layer pattern formation process deposits the dielectric frame(120) on the upper side of a wafer cap(210) composed of the silicon(110) of a predetermined thickness, to form a conductive layer pattern(230) on the upper side so as to connect the inner fixed point(150) with the outer fixed point(160). A Cr/Au deposition and patterning process protects a conductive layer by depositing a second dielectric frame on the upper side of the conductive layer pattern(230). An etching process is possible for a wiring bonding from the outer fixed point(160) of the wafer device(140) by etching the outer side of the fixed point(160) connecting unit of the wafer cap(210). The process seals the micro sensor(130) of the wafer device(140) by the wafer device(140) and the low melting point bonding with the wafer cap(210).
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