发明名称 CIRCUIT FOR ENHANCING ELECTROSTATIC DISCHARGING PERFORMANCE
摘要 PURPOSE: A circuit for enhancing the electrostatic discharging performance is provided to enhance the performance of CDM by installing an ESD current pulse relaxing means between an input pad and an input ESD protection pad to delay the ESD current pulse rising time, thereby relaxing the ESD current pulse. CONSTITUTION: In the circuit for enhancing the electrostatic discharging performance, an input ESD protection pad(4) has an input pad(1), an ESD clamp circuit part(2), resistors(R1,R2) and an NMOS transistor(3). An input ESD current pulse relaxing means(10) is mounted between the input pad(1) and an input ESD protection pad(4) and delays the ESD current pulse rising time to prevent the breakup of the oxidation layer in the input gate terminal(7). The input gate terminal is made of NMOS transistor(5) and PMOS transistor(6), and connected to the output terminal of the input ESD protection pad(4).
申请公布号 KR20010056448(A) 申请公布日期 2001.07.04
申请号 KR19990057905 申请日期 1999.12.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SO, HYEONG TAE
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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