| 摘要 |
PURPOSE: A method for manufacturing titanium silinitride layer using CVD is provided to prevent the diffusion of a capacitor electrode layer a metal contact layer, a bitline contact layer in a semiconductor manufacturing process by manufacturing a titanium silinitride layer using a CVD method. CONSTITUTION: A flow late of a deposition gas used for depositing a titanium silinitride layer in a CVD chamber, is TiCl4 1 sccm-100 sccm, SiH4 1 sccm-300 sccm, H2 100 sccm-5000 sccm, N2 100 sccm-3000 sccm, Ar 10 sccm-500 sccm. A temperature of the CVD chamber during the depositing is 300 °C-700 °C; and, a pressure is 1 torr-20 torr. An RF power used in the CVD chamber is 100 W-1 KW. The titanium silinitride layer is in the form of TiSixN1-x, where x is 0.1<x<0.9.
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