| 摘要 |
PURPOSE: A method for measuring a ring-OSF of a wafer using a laser scattering tomography is provided to measure a ring-OSF by measuring a defect of a laser scattering tomography for a wafer before or after performing a heat treatment. CONSTITUTION: A laser beam is irradiated to a surface of a wafer. The laser beam is scattered according to a depth of the wafer. The scattered laser beam is detected by a predetermined detection portion. In the method for measuring a ring-OSF of the wafer, a measuring depth is controlled by using a laser scattering tomography. Accordingly, the ring-OSF within the wafer is measured regardless of a heat treatment.
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