| 摘要 |
PURPOSE: A method for forming isolating structure of semiconductor apparatus is provided to reduce an exposure probability top portion unit of a substrate and to prevent the degradation of characteristics of the substrate by forming an isolating structure within a trench and preventing the concentration of a magnetic field on the top portion rounded. CONSTITUTION: A trench formation process performs a dry etching on a part of a substrate(1) by using a hardmask for stacking a pad oxide layer(2) and a nitride layer(3) located on the top of the substrate(1), to forms a shallow trench. A round pattern formation process applies a photoresist to the top of the substructure to form a pattern exposing a part of the nitride layer(3) of both sides of the trench by using an exposing and developing process. A top portion exposing process eliminates the exposed nitride layer(3) and the pad oxide layer(2) of the exposed nitride layer(3) and the pad oxide layer(2) of the lower part during an etching process by utilizing the photoresist pattern as an etching mask, to expose the top portion of the substrate(1) which is the side of the top of the trench. A process eliminates the photoresist pattern to form an oxide layer on the side and bottom of the trench and on the upper portion including the top portion of the substrate(1) through a thermal oxide layer formation process. A top potion polishing and an isolating structure formation process forms the rounded peak of the exposed substrate(1) by etching the thermal oxide layer, deposits the oxide layer, exposes the top of the remaining nitride by smoothing the oxide layer, to form an isolating structure located within the trench as etching the nitride(3) and the pad oxide layer(2) positioned on the lower part of the trench.
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