| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to prevent a buried contact plug from falling down in a following reflow process. CONSTITUTION: The method includes forming a bit line(210) capped by an insulating layer(212), then forming an interlayer dielectric layer(214) over an entire surface, the planarizing the interlayer dielectric layer(214) so that the capping insulating layer(212) is exposed, then forming an etch stop layer(216) is formed on the planarized interlayer dielectric layer(214) and the exposed capping insulating layer(212), then selectively etching the etch stop layer(216) and the interlayer dielectric layer(214) so as to form a contact hole between adjacent bit lines(210), then forming the buried contact plug(218) filling the contact hole, and then forming a capacitor having lower and upper electrodes(220,222) over the buried contact plug(218). Since the interlayer dielectric layer(214) is intercepted by the capping insulating layer(212) interposed between the underlying bit line(210) and the overlying etch stop layer(216), the falling down of the buried contact plug(218) in the interlayer dielectric layer(214) is prevented.
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