发明名称 Production of electrodes used in production of stacked capacitor in DRAMs comprises forming a molded support structure in or on substrate, enlarging surface of structure; and forming electrodes using support structure
摘要 Production of electrodes in a micromechanical or microelectronic device comprises forming a molded support structure in or on a substrate (10); enlarging the surface of the structure; and forming the electrodes (150) using the support structure. Preferred Features: The structure is filled with electrode material using CVD, ALCVD galvanic deposition or a using a spin-on application. The electrode material is Pt, Ir, IrO2, Ru, RuO2, SrxRuyOz, W, WN, WSi, Ta, TaN, Ti, TiN, Mo, MoN or Al.
申请公布号 DE19958907(A1) 申请公布日期 2001.07.05
申请号 DE19991058907 申请日期 1999.12.07
申请人 INFINEON TECHNOLOGIES AG 发明人 GOEBEL, BERND;GUTSCHE, MARTIN
分类号 B81C1/00;H01L21/02;H01L21/768;H01L21/8242;(IPC1-7):H01L21/283;H01L27/08;H01G4/33;H01L21/824 主分类号 B81C1/00
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