| 摘要 |
PURPOSE: A circuit for discharging electro-static of a flash memory device is provided to reduce a chip size by removing an NMOS transistor for measuring a threshold voltage and current of cell from the circuit. CONSTITUTION: The circuit includes an inverter(P11,N11), a switching unit(N12), a voltage divider(P12,N13), and a well resistor(R) and a protection transistor(N14). The inverter connects a supply voltage(Vcc) terminal with a ground terminal, and determines a voltage level of the first node(Q11) in response to the first control signal(S). The switching unit connects the first node with the ground terminal, and drops the voltage level of the first node to a ground voltage level in response to the first control signal. The voltage divider connects the supply voltage terminal with the ground terminal, and determines the voltage level of an output node(Q12). The well resistor and the protection transistor connect the output node with the ground terminal. A signal passed through the well resistor inputs to a circuit for measuring a threshold voltage of the cell and data input buffer.
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