| 摘要 |
PURPOSE: A method for forming poly-interlayer dielectric of semiconductor device is provided to increase the mechanical characteristics among poly-interlayer metal wirings formed with a low dielectric constant layer by increasing an adhesive property between a mineral dielectric layer and a high polymer dielectric layer on a semiconductor device. CONSTITUTION: A process forms a mineral dielectric layer(12) on a substrate(11). The process forms a porosity dielectric layer(13) including a plurality of pores(14) on the mineral dielectric layer(12). The process applies a first high polymer dielectric layer(15) of a low viscosity as to be absorbed on a pore of the porosity dielectric layer(13) and to form a porosity-high polymer composite layer(16). The process applies a second high polymer dielectric layer(17) on the porosity-high polymer composite layer(16).
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