| 摘要 |
PURPOSE: A method for eliminating fault of semiconductor pattern is provided to prevent a device yield drop depending on a micro bridge and a particle, and to increase the reliability of manufacturing process by insulating electrically a micro bridge or a particle between patterns using a rapid thermal process after forming the pattern of a substrate. CONSTITUTION: A rapid thermal process is implemented to eliminate a particle(14) and a micro bridge between patterns(13) forming a predetermined pattern of a semiconductor device. The rapid thermal process is implemented in an oxygen atmosphere. After the rapid thermal process, an oxide layer formed by the thermal process is eliminated by implementing a cleaning process.
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