METHOD OF FABRICATING BC-SOI DEVICE

摘要

PURPOSE: A method of fabricating BC(Body Contact)-SOI device is provided to form a device isolation layer by using a shallow trench isolation process. CONSTITUTION: An SOI substrate(20) is made of a supporting substrate(11), a buried oxidation layer(12) and semiconductor layer(13). A pattern of a pad oxidation layer(21) and a pad nitride layer(22) are deposited thereon to expose a device isolation region. A spacer(24) is formed on sidewall of the pattern deposited. A field oxidation layer(25) is formed by thermally processing the device isolation layer of the semiconductor layer exposed. After the exposed portion of the field oxidation layer by dry etching, a semiconductor is etched to form a trench(26). A channel stop ion is injected in the semiconductor substrate under the trench. To bury the trench, an oxidation layer(28) is deposited thereon. The oxidation layer and the pad nitride layer are polished to bury the oxidation layer only in the trench. The remaining pad nitride layer and pad oxidation layer are removed.