| 摘要 |
PURPOSE: A storage contact of semiconductor device and forming method thereof is provided to increase the yield, not be subjected to restriction about align opened area, be easy in process and be easy of an improvement about a storage contact profile and a CD(Critical Dimension) control by preventing an oxide of a bitline due to an oxide layer for protecting the bitline, restraining a crack badness due to the volume inflation of W composing bitline, forming an oxide layer on the bitline for protecting a bitline before an etching process for forming a storage contact hole and being no constraint of chemical used in a pre-cleaning performed prior to the deposition of a polysilicon layer to form a storage contact layer. CONSTITUTION: A cell transistor is formed on a substrate including a peripheral circuit area and cell area. A dielectric layer(41) includes a bitline contact plug layer(42) contacted on one side electrode of the cell transistor and is formed on the surface. A bitline(46) is formed on the dielectric layer(41) and an oxide layer for protecting a bitline(45) is formed on bitline(46). A nitride layer for preventing an oxide and an oxide layer is stacked on the surface to expose the bitline plug layer(42). A storage contact layer is connected to the bit line contact plug layer.
|
