| 摘要 |
PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to reduce well junction capacitance by decreasing concentration of a well without changing characteristics of the transistor. CONSTITUTION: In the method, a field oxide layer(1) is formed on an n-type silicon substrate, and a p-well(2) is formed. Next, an oxide insulating layer is formed over a resultant structure and etched to form a contact hole exposing a portion of the p-well(2). Next, a channel stopper ion(5) is implanted into the p-well(2) through the contact hole, and then a gate oxide layer and a polysilicon layer(7) for a gate are sequentially deposited over a resultant structure. Next, the polysilicon layer(7) is planarized by a chemical mechanical polishing process, and then the oxide insulating layer is removed by a dry etching process. Next, a spacer(8) is formed and then an impurity ion(9) with high concentration is implanted to form a source and a drain. Since the channel stopper ion(5) is formed only underneath the gate(7), well junction capacitance is reduce by a decreased concentration of the p-well(2).
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