| 摘要 |
PURPOSE: A method for forming a passivation layer of a semiconductor device is provided to improve resistance to moisture and thereby to prevent corrosion of a metal interconnection line. CONSTITUTION: The method includes forming an interlayer dielectric layer(200) on a wafer having passed a predetermined process, then repeating a formation of a metal interconnection line(300,600) and a following formation of an intermetal dielectric layer(500) to constitute multilevel interconnection, then selectively forming contact holes for a pad and a fuse box, and then forming a silicon oxide nitride(SiON) layer(700) as the passivation layer over a resultantly exposed structure by treating with NH3 plasma. In particular, the silicon oxide nitride layer(700) provides an increased resistance to moisture for the interlayer dielectric layer(200) and the intermetal dielectric layer(500).
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