| 摘要 |
PURPOSE: An optical recording medium is provided to perform recording of high density over a diffraction limit by using third non-linear material of gallium nitride including GaN thin film. CONSTITUTION: A first protect film is formed on a substrate. Then, a supersaturated absorbing film formed by amorphous or crystalloid GaN is formed. A second protect film of the same material with the first protect film or a different material from the first protect film is sprayed on the supersaturated absorbing film. A recording film is formed on the second protect film. Herein, Ge2Sb2Te5, Ge1Sb4Te7, Ge1Sb2Te4, AgInSbTe alloy, GeTe alloy, or SbTe alloy is sued for the recording film. A third protect film is formed on the recording film by using the same material with first and second protect films or a different material from first and second protect films. Then, a reflecting film is formed on the third protect film. |
