METHOD FOR MANUFACTURING TANTALUM OXIDE FILM

摘要

PURPOSE: A fabrication method of a tantalum oxide(Ta2O5) film is provided to increase a growing speed of the tantalum oxide film by adding H2O gases. CONSTITUTION: The Ta2O5 film is fabricated by CVD(Chemical Vapor Deposition). A tantalum source(6a) and an oxygen gases are inflow in a CVD chamber(4) through a vaporizer(5), thereby forming the tantalum oxide film on a semiconductor substrate. At this time, in order to activate the chemical reaction of the tantalum source gas(6a) and the oxygen gas in the CVD chamber(4), H2O gases are further added into the CVD chamber(4). That is, a touch(9) for generating the H2O gases further includes in the CVD chamber.