| 摘要 |
The invention relates to a method for treating an implant, and to an implant treated by said method. All or some of the outer surfaces of the implant are oxidized with a layer (1a) of substantial thickness and substantial porosity or pore volume. One or more CaP layers (12) are applied to the porous surface or surface of large pore volume. Bone-growth-stimulating agents (13), for example rh-BMP-2 or rh-BMP-7, are then applied to the CaP layer. The method and the device make it possible to support a maximum quantity of bone-growth-stimulating agent, which can be controlled in respect of its release function. |
