| 摘要 |
PURPOSE: A sense amplifier of a semiconductor memory device is provided to increase an operation speed by detecting the level of a supply voltage of the sense amplifier and boosting the supply voltage when the supply voltage is lower than a reference voltage. CONSTITUTION: The sense amplifier includes a supply voltage booster, the first through third sense amplification portions(110,120), an output portion(150) and an equalization pull-up circuit(140). The supply voltage booster detects the voltage level of the supply voltage in response to a sense amp enable signal and boosts the supply voltage to a voltage higher than a predetermined voltage when the supply voltage is lower than the reference voltage. The first and second sense amplification portions receive the boosted voltage from the supply voltage booster as an operation voltage and sense to amplify a voltage difference of input data in an active operation. The third sense amplification portion senses and amplifies output signals of the first and second sense amplification portions. The output portion receives the output signal of the third sense amplification portion and outputs data and complementary data. The equalization pull-up circuit precharges and equalizes output terminals of the first and second sense amplification portions in a stand-by mode.
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