| 摘要 |
PURPOSE: A method for etching a semiconductor device is provided to expose a metal layer by using a Reactive Ion Etching with CF4 gas having an excellent an isotropic etching characteristics, and to prevent a sputter grass from being generated by using a dry etching process together with a wet etching process. CONSTITUTION: The method includes three steps. The first step is to form an insulating layer(23) on the upper portion of a semiconductor substrate(21) on which a metal line layer(22) is formed. The second step is to discontinuously etch the insulating layer by a Reactive Ion Etching with a mixed gas in which CF4 and O2 are mixed. The third step is to expose the metal line layer by repeating the second step.
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