发明名称 |
METHOD FOR PREPARING FIELD EMISSION MICROELECTRONIC DEVICE |
摘要 |
PURPOSE: Provided is a method for preparing a field emission microelectronic device grows carbon nanotube on a soda lime glass base plate. CONSTITUTION: The method comprises steps of: (i) forming a lower part electrode(22), a resistance layer(23), an insulating film(24) and a gate layer(25) on a glass base plate(21) in sequence; (ii) after partly etching the gate layer and the insulating film through photo-etching to form a hole, forming a catalytic transition metal layer(26) on the upper part of the resistance layer of the hole bottom; and (iii) selectively heating the catalytic transition metal layer by the outside energy source with keeping the glass base plate at a relatively low temperature of 100-500 deg.C to selectively form carbon nanotubes(29) on the upper part of the catalytic transition metal layer.
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申请公布号 |
KR20010057162(A) |
申请公布日期 |
2001.07.04 |
申请号 |
KR19990058952 |
申请日期 |
1999.12.18 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KANG, NAM SEOK;LEE, DONG GU |
分类号 |
B82B3/00;(IPC1-7):B82B3/00 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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