发明名称 METHOD FOR PREPARING FIELD EMISSION MICROELECTRONIC DEVICE
摘要 PURPOSE: Provided is a method for preparing a field emission microelectronic device grows carbon nanotube on a soda lime glass base plate. CONSTITUTION: The method comprises steps of: (i) forming a lower part electrode(22), a resistance layer(23), an insulating film(24) and a gate layer(25) on a glass base plate(21) in sequence; (ii) after partly etching the gate layer and the insulating film through photo-etching to form a hole, forming a catalytic transition metal layer(26) on the upper part of the resistance layer of the hole bottom; and (iii) selectively heating the catalytic transition metal layer by the outside energy source with keeping the glass base plate at a relatively low temperature of 100-500 deg.C to selectively form carbon nanotubes(29) on the upper part of the catalytic transition metal layer.
申请公布号 KR20010057162(A) 申请公布日期 2001.07.04
申请号 KR19990058952 申请日期 1999.12.18
申请人 LG ELECTRONICS INC. 发明人 KANG, NAM SEOK;LEE, DONG GU
分类号 B82B3/00;(IPC1-7):B82B3/00 主分类号 B82B3/00
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