METHOD OF PRODUCING BARRIER LAYER FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of producing a barrier layer for a semiconductor device is provided to improve a characteristics of by barrier layers by depositing an amorphous layer in a nitride titanium film with the sputtering technique without performing any additional process. CONSTITUTION: In the method of producing the barrier layer for the semiconductor device, at least two barrier layers(35) are formed by adding hydrogen to a nitride titanium film in a semiconductor substrate(31) with the aid of the sputtering technique. An amorphous layer(33) is formed between the barrier layers(35). The hydrogen is added to the nitride titanium film at 5-10%. The hydrogen isotope is added to the nitride titanium film at the time that the barrier layers(35) are formed by using the sputtering technique. A metal layer(36) is formed on the barrier layers(35). The barrier layers(35) comprises the first insulating layer(32) formed on the semiconductor substrate(31), the amorphous layer(33) and the second insulating layer(34) formed on the amorphous layer(33).