发明名称 CHARGE COUPLED DEVICE
摘要 PURPOSE: A charge coupled device is provided to enhance transfer efficiency by differently forming a structure of a V-H interface portion. CONSTITUTION: A plurality of photo diode regions(31) is regularly arranged. A vertical charge transfer region(32) is composed between the photo diode regions(31) for transferring a photoelectric converted charge in a vertical direction. A horizontal charge transfer region(36) is composed for transferring the vertically transferred charged in a horizontal direction to be sensed in a floating diffusion region. First and second poly gate(34,35) are repeatedly composed on the vertical charge transfer region(32) for being electrically divided each other and being overlapped.
申请公布号 KR20010056490(A) 申请公布日期 2001.07.04
申请号 KR19990057965 申请日期 1999.12.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, CHAN;YOON, SEONG HYEOK
分类号 H01L27/146;H04N5/335;(IPC1-7):H04N5/335 主分类号 H01L27/146
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