发明名称 |
CHARGE COUPLED DEVICE |
摘要 |
PURPOSE: A charge coupled device is provided to enhance transfer efficiency by differently forming a structure of a V-H interface portion. CONSTITUTION: A plurality of photo diode regions(31) is regularly arranged. A vertical charge transfer region(32) is composed between the photo diode regions(31) for transferring a photoelectric converted charge in a vertical direction. A horizontal charge transfer region(36) is composed for transferring the vertically transferred charged in a horizontal direction to be sensed in a floating diffusion region. First and second poly gate(34,35) are repeatedly composed on the vertical charge transfer region(32) for being electrically divided each other and being overlapped. |
申请公布号 |
KR20010056490(A) |
申请公布日期 |
2001.07.04 |
申请号 |
KR19990057965 |
申请日期 |
1999.12.15 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK, CHAN;YOON, SEONG HYEOK |
分类号 |
H01L27/146;H04N5/335;(IPC1-7):H04N5/335 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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