METHOD FOR PROCESSING PLASMA IN SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PURPOSE: A method for processing plasma is provided to efficiently remove reaction by-products while minimizing generation of contaminant particles caused in a cleaning process during a plasma process. CONSTITUTION: A method for processing plasma etches a silicon film quality on a wafer within a reaction chamber using plasma generated from a halogen-group element-containing gas while supplying RF electric field to the reaction chamber. The interior of the reaction chamber is cleaned using plasma generated from gas containing O2 gas while reducing the power of the RF electric field applied to the reaction chamber by a given ramping rate.