METHOD FOR FORMING CONTACT HOLE USING I-LINE RESIST HAVING CHARACTERISTIC OF OXIDE LAYER

摘要

PURPOSE: A method for forming a contact hole using an I-line resist having a characteristic of an oxide layer is provided to form stably a contact hole by adding a component of an oxide layer into an I-line resist. CONSTITUTION: A substrate formed with a lower layer is provided. A surface of the substrate is processed by using an HMDS(Hexamethyl Disilazane) solution. An exposure process for the substrate is performed by using an I-line exposure system. A resist with a characteristic of an oxide layer is applied thereon. A soft bake process for the resist is performed. The exposure process for the resist is performed partially by using the I-line exposure system. A PEB(Post Exposure Bake) process for the exposed resist is performed. A resist pattern is formed by developing the exposed resist. A hard bake process for the resist pattern is performed.