发明名称 MEMBER FOR TREATING SUBSTRATE CONTAMINATED WITH METALLIC SUBSTANCE AT LOW DEGREE
摘要 PROBLEM TO BE SOLVED: To provide a member for treating a substrate contaminated by a metallic substance at a low degree, which is highly corrosion-inhibitive under halogn gas plasma environments and also shows a low degree of contamination with the metallic substance. SOLUTION: This member for treating the substrate s used for a device to treat the substrate by a halogen gas plasma. The region exposed to the halogen gas plasma of the member is composed of Y2O3 having a relative density of 94% or more and a purity of 99.5% or more.
申请公布号 JP2001179080(A) 申请公布日期 2001.07.03
申请号 JP19990368827 申请日期 1999.12.27
申请人 NIHON CERATEC CO LTD;TAIHEIYO CEMENT CORP 发明人 SUZUKI ATSUSHI;OTAKI HIROMICHI;KISHI YUKIO
分类号 B01J19/08;H01L21/302;H01L21/3065;(IPC1-7):B01J19/08;H01L21/306 主分类号 B01J19/08
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