发明名称 |
MEMBER FOR TREATING SUBSTRATE CONTAMINATED WITH METALLIC SUBSTANCE AT LOW DEGREE |
摘要 |
PROBLEM TO BE SOLVED: To provide a member for treating a substrate contaminated by a metallic substance at a low degree, which is highly corrosion-inhibitive under halogn gas plasma environments and also shows a low degree of contamination with the metallic substance. SOLUTION: This member for treating the substrate s used for a device to treat the substrate by a halogen gas plasma. The region exposed to the halogen gas plasma of the member is composed of Y2O3 having a relative density of 94% or more and a purity of 99.5% or more.
|
申请公布号 |
JP2001179080(A) |
申请公布日期 |
2001.07.03 |
申请号 |
JP19990368827 |
申请日期 |
1999.12.27 |
申请人 |
NIHON CERATEC CO LTD;TAIHEIYO CEMENT CORP |
发明人 |
SUZUKI ATSUSHI;OTAKI HIROMICHI;KISHI YUKIO |
分类号 |
B01J19/08;H01L21/302;H01L21/3065;(IPC1-7):B01J19/08;H01L21/306 |
主分类号 |
B01J19/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|