发明名称 Hipot barrier structure for transformer
摘要 A hipot barrier structure for a transformer for preventing instantaneous hipot from transiting from pins at high-tension side to pins at low-tension side directly via a conductive core of the transformer, so that damages to the whole circuitry can be avoided to comply with required safety code. The barrier structure includes a barrier member made of insulating material and having a generally C-shaped cross-section for fitly covering the high-tension side of the core in a tight fit relation and forming an outer layer of the core at the high-tension side. The barrier member increases a creepage distance between the pins and the conductive core and therefore effectively prevents a hipot from directly crossing over the core.
申请公布号 US6255931(B1) 申请公布日期 2001.07.03
申请号 US19980201862 申请日期 1998.12.01
申请人 ATECH TECHNOLOGY CO., LTD. 发明人 CHEN JAMES CHIEN-CHUNG
分类号 H01F27/32;(IPC1-7):H01F27/29;H01F27/30 主分类号 H01F27/32
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