发明名称 |
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions |
摘要 |
A method for forming ultra shallow junctions in a semiconductor wafer with reduced junction leakage arising from a silicidation process amorphizes the semiconductor material in the gate and source/drain junctions prior to the deposition of the metal during silicidation. After the gate and source/drain junctions are formed in a semiconductor device, non-dopant material, such as silicon or germanium, is implanted into the semiconductor material in an unmasked implantation procedure. This highly controllable implanting creates amorphous silicon regions with a substantially smooth interface with the crystalline silicon. When the silicide regions are formed during subsequent annealing steps, the silicide forms in a manner that follows the amorphous regions so that the silicide/silicon interface is also substantially smooth and junction leakage induced by silicidation is prevented.
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申请公布号 |
US6255214(B1) |
申请公布日期 |
2001.07.03 |
申请号 |
US19990256782 |
申请日期 |
1999.02.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WIECZOREK KARSTEN;KEPLER NICK;BESSER PAUL R. |
分类号 |
H01L21/285;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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