Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices

摘要

A process for forming T-shaped metal contacts on a dielectric substrate. The process includes deposition of first and second photoresist layers onto a substrate; individually overall electron beam exposure of both layers; with subsequent imagewise UV exposure and development of both layers to form hollow cavities in the layers. By concentrating the electron beam radiation on the mid-point in the thickness of each photoresist layer, the radiation is distributed throughout each layer, resulting in solubility properties which lead to the formation of hollow cavities of a certain desired shape. In one embodiment of the invention, three-dimensional structures are formed in the photoresist layers by filling the hollow cavities with metal. Subsequent removal of unwanted portions of the photoresist layers produces a dielectric substrate having T-shaped metal contacts on its surface.