发明名称 |
Etching process of CoSi2 layers |
摘要 |
The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.
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申请公布号 |
US6255227(B1) |
申请公布日期 |
2001.07.03 |
申请号 |
US20000478252 |
申请日期 |
2000.01.06 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM |
发明人 |
DONATON RICARDO ALVES;MAEX KAREN IRMA JOSEF;VERBEECK RITA;JANSEN PHILIPPE;ROOYACKERS RITA;DEFERM LUDO;BAKLANOV MIKHAIL RODIONOVICH |
分类号 |
H01L21/265;H01L21/3213;H01L21/336;H01L29/10;H01L31/108;(IPC1-7):H01L21/302;H01L21/00 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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