| 摘要 |
PROBLEM TO BE SOLVED: To perform thin film deposition with superior reproducibility by stably producing gas plasma in manufacturing a thin film by plasma enhanced CVD. SOLUTION: A reactant gas containing a source gas for thin film, such as silane halide gas, is supplied into a reaction chamber held in a vacuum state, and plasma excitation electric power is applied by time modulation outgoing to a plasma generation electrode disposed in the chamber or to a plasma generation electrode disposed outside the chamber via a dielectric to generate reactant gas plasma, by which a thin film, such as silicon thin film, is deposited on the surface of a substrate disposed in the chamber.
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