发明名称 |
Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same |
摘要 |
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
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申请公布号 |
US6256222(B1) |
申请公布日期 |
2001.07.03 |
申请号 |
US20000612805 |
申请日期 |
2000.07.10 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKAKIMA HIROSHI;IRIE YOUSUKE;SATOMI MITSUO;KAWAWAKE YASUHIRO |
分类号 |
G01R33/09;G11B5/39;G11C11/15;G11C11/16;G11C11/56;H01L21/8246;H01L27/22;H01L43/10;H03F7/02;(IPC1-7):G11C11/00;G11C11/14 |
主分类号 |
G01R33/09 |
代理机构 |
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