发明名称 |
Solution processed devices |
摘要 |
A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor; and subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first material a second material from solution in a second solvent in which the first material is substantially insoluble. |
申请公布号 |
AU2206601(A) |
申请公布日期 |
2001.07.03 |
申请号 |
AU20010022066 |
申请日期 |
2000.12.21 |
申请人 |
PLASTIC LOGIC LIMITED |
发明人 |
HENNING SIRRINGHAUS;RICHARD HENRY FRIEND;TAKEO KAWASE |
分类号 |
H01L21/28;H01L21/311;H01L21/336;H01L21/768;H01L27/32;H01L29/786;H01L51/00;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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