| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly productive plating method capable of superiorly filling a part to be plated, such as connection hole and wiring groove of a semiconductor device, and a plated structure. SOLUTION: After a barrier layer 5 and a catalytic layer 30 are formed on the plane including a connection hole 7 formed on a wafer 41, the catalytic layer 30 excluding that on the connection hole 7 is removed by scrubbing, by which the catalyst layer 30 on the connection hole 7 is left selectively. By performing copper electroplating in this state, a copper plating film 8A can be formed on the connection hole 1 alone. The copper plating film 8A can be embedded in this state as a copper wiring 8 by electroless plating or can be embedded as a copper wiring 8 by electroplating using the copper plating film 8 as a seed layer.
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