发明名称 METHOD OF CONTINUOUS FILM DEPOSITION USING ATMOSPHERIC PRESSURE PLASMA
摘要 PROBLEM TO BE SOLVED: To perform inline measurement of a thin film deposited on a substrate. SOLUTION: The inline measurement of the thickness of a thin film deposited on a substrate S is performed by providing a light source 2 for irradiating a substrate S having a deposited film with light, a spectrometer 3 for spectrally diffracting the reflected light reflected by the substrate S, an optical multichannel analyzer 4 for detecting the spectrally diffracted light, and a computer 5 for computing the thickness of the thin film on the basis of the output of the analyzer 4. Further, the film thickness can be held constant by performing feedback control on the basis of the resultant measured value of the film thickness.
申请公布号 JP2001181850(A) 申请公布日期 2001.07.03
申请号 JP19990359087 申请日期 1999.12.17
申请人 SEKISUI CHEM CO LTD 发明人 HAYASHI HIDEKI
分类号 C08J7/06;C23C16/52;C23C16/54;G01B11/06;(IPC1-7):C23C16/52 主分类号 C08J7/06
代理机构 代理人
主权项
地址