发明名称 |
Method of making a iii-nitride light-emitting device with increased light generating capability |
摘要 |
The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate. |
申请公布号 |
AU2738901(A) |
申请公布日期 |
2001.07.03 |
申请号 |
AU20010027389 |
申请日期 |
2000.12.21 |
申请人 |
LUMILEDS LIGHTING U.S., LLC |
发明人 |
JONATHAN J. WIERER JR.;MICHAEL R. KRAMES;DANIEL A. STEIGERWALD;FRED A KISH;PRADEEP RAJKOMAR |
分类号 |
H01L25/075;H01L27/15;H01L33/00;H01L33/08;H01L33/32;H01L33/38;H01L33/40;H01L33/60;H01L33/64 |
主分类号 |
H01L25/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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