发明名称 THIN FILM DEPOSITION METHOD AND THIN FILM DEPOSITION SYSTEM USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a thin film deposition method capable of reducing the cost of the raw material by effectively utilizing the raw material and moreover excellent in the stability of characteristics and to provide a thin film deposition system used therefor. SOLUTION: In a stage in which film deposition is not executed (non-film deposition stage) between continuous film deposition stages, an adduct is added to the raw material, by which the raw material (aβ-diketone metallic compound having the adduct) is reproduced and is used as an MOCVD raw material. Moreover, in the raw material reproducing stage, at least one of the two requirements of (a) in which the temperature of a prescribed raw material vessel is held to the one lower than that in the film deposition stage and (b) in which the pressure in a prescribed raw material vessel is held to the one higher than that in the film deposition stage is satisfied, the vapor of the adduct is fed to the prescribed raw material vessel, and the liquid phase raw material in the raw material vessel and the vapor of the adduct are brought into contact with each other, by which, while the decomposition of the raw material is prevented, the adduct is added to the raw material, and the reproduction of the raw material is executed.
申请公布号 JP2001181839(A) 申请公布日期 2001.07.03
申请号 JP19990366348 申请日期 1999.12.24
申请人 MURATA MFG CO LTD 发明人 TAKESHIMA YUTAKA
分类号 C23C16/18;C23C16/44;C23C16/455;(IPC1-7):C23C16/18 主分类号 C23C16/18
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