| 摘要 |
A method for cleaning and conditioning interior surfaces of a plasma chamber in which substrates such as silicon wafers are processed. The method includes cleaning the chamber such as by a wet clean or in-situ plasma clean, introducing a conditioning gas into the chamber, energizing the conditioning gas into a plasma state, depositing a polymer coating on the interior surfaces and processing a substrate. The conditioning step can be performed without a substrate such as a wafer in the chamber and the processing step can be carried out without running conditioning wafers through the chamber prior to processing production wafers. In the case of a plasma chamber used for etching aluminum, the conditioning gas can include a fluorine-containing gas, a carbon-containing gas and a chlorine-containing gas. |
