| 发明名称 |
Silicon carbide stop layer in chemical mechanical polishing over metallization layers |
| 摘要 |
Silicon carbide (SiC) is used as the stop layer for the chemical-mechanical polishing used to planarize the surface of interlevel dielectrics, making the resistance of the vias more uniform. Alternatively, silicon carbonitride or silicon carboxide can be used in place of silicon carbide.
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| 申请公布号 |
US6255211(B1) |
申请公布日期 |
2001.07.03 |
| 申请号 |
US19990410310 |
申请日期 |
1999.10.01 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
OLSEN LEIF C.;SWANSON LELAND S. |
| 分类号 |
H01L21/3105;H01L21/314;H01L21/3213;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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