| 摘要 |
PROBLEM TO BE SOLVED: To realize a ferroelectric multilayer structure having excellent heat resistance based on the theoretical consideration about the effect on potential, when two-dimensional load of the [111] axis and the vertical axis is loaded on the [111] oriented ferroelectric membrane and to inhibit the memorized information from vanishing due to the temperature rise of an FeRAM. SOLUTION: The multilayer structure includes at least a PZT membrane 13 that is the ferroelectric membrane having a perovskite-type structure including at least [111] oriented grains and an Al plate 15 that is a membrane imparting two-dimensional tensile stress in the vertical face in the [111] direction of the PZT membrane 13.
|
