CHEMICAL MACHINE POLISHING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a chemical machine polishing method for positively reducing the number of cohesive abrasive grains in a polishing slurry before supplied to the polishing device and causing less scratches on the polished surface of a material after polished. SOLUTION: In flattening the surface of a polished material, mechanical energy is applied to a polishing slurry 2 with a preset concentration of abrasive grains stored in a reservoir 1 by using a stirring rod 4 with a propeller 3 for controlling the concentration of cohesive abrasive grains in the polishing slurry 2, and then the polishing slurry 2 is introduced into the polishing device.