发明名称 Active shield for generating a plasma for sputtering
摘要 A combination coil and shield for a plasma chamber in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also substantially blocks deposition material from reaching a second shield positioned behind the first shield.
申请公布号 US6254737(B1) 申请公布日期 2001.07.03
申请号 US19960730722 申请日期 1996.10.08
申请人 APPLIED MATERIALS, INC. 发明人 EDELSTEIN SERGIO;SUBRAMANI MANI
分类号 C23C14/00;C23C14/34;H01J37/32;H01J37/34;H01L21/02;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/00
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